دیتاشیت STB12NM50T4

ST(B,P)12NM50(FP,-1)

مشخصات دیتاشیت

نام دیتاشیت ST(B,P)12NM50(FP,-1)
حجم فایل 548.441 کیلوبایت
نوع فایل pdf
تعداد صفحات 17

دانلود دیتاشیت ST(B,P)12NM50(FP,-1)

ST(B,P)12NM50(FP,-1) Datasheet

مشخصات

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STB12NM50T4
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Power Dissipation (Pd): 160W
  • Total Gate Charge (Qg@Vgs): 39nC@10V
  • Drain Source Voltage (Vdss): 550V
  • Input Capacitance (Ciss@Vds): 1000pF@25V
  • Continuous Drain Current (Id): 12A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@50uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 350mΩ@10V,6A
  • Package: TO-263
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STB12N
  • detail: N-Channel 550V 12A (Tc) 160W (Tc) Surface Mount D2PAK

دیتاشیت محصولات مشابه